![1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates: Applied Physics Letters: Vol 111, No 3 1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates: Applied Physics Letters: Vol 111, No 3](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4994318&id=images/medium/1.4994318.figures.online.highlight_f1.jpg)
1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates: Applied Physics Letters: Vol 111, No 3
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Figure 1 from Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
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